Datasheet Details
| Part number | AOD296A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 612.31 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOD296A-AlphaOmegaSemiconductors.pdf |
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Overview: AOD296A/AOI296A 100V N-Channel AlphaSGT TM General.
| Part number | AOD296A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 612.31 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOD296A-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • Pb-Free lead Plating, RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Recfification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 70A < 8.3mΩ < 10.6mΩ TO-252 TO-251A DPAK IPAK Top View Bottom View Top View Bottom View D D D S G AOD296A Orderable Part Number AOD296A AOI296A G S S D G AOI296A G D S Package Type TO-252 TO-251A Form Tape & Reel Tube G S Minimum Order Quantity 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10μs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 70 45 195 19 15 33 54 120 89 35 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 1.1 Max 20 50 1.4 Units °C/W °C/W °C/W Rev.2.0: August 2020 www.aosmd.com Page 1 of 6 AOD296A/AOI296A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD296A | N-Channel MOSFET | INCHANGE |
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