900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Alpha & Omega Semiconductors

AOD296A Datasheet Preview

AOD296A Datasheet

N-Channel MOSFET

No Preview Available !

AOD296A/AOI296A
100V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Logic Level Driving
• Excellent QG x RDS(ON) Product (FOM)
• Pb-Free lead Plating, RoHS and Halogen-Free
Compliant
Applications
• High Frequency Switching and Synchronous
Recfification
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
100V
70A
< 8.3mΩ
< 10.6mΩ
TO-252
TO-251A
DPAK
IPAK
Top View
Bottom View
Top View
Bottom View
D
D
D
S
G
AOD296A
Orderable Part Number
AOD296A
AOI296A
G
S
S
D
G
AOI296A
G
D
S
Package Type
TO-252
TO-251A
Form
Tape & Reel
Tube
G
S
Minimum Order Quantity
2500
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
VDS Spike I
10μs
TC=25°C
Power Dissipation B TC=100°C
VGS
ID
IDM
IDSM
IAS
EAS
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
70
45
195
19
15
33
54
120
89
35
6.2
4.0
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RqJA
15
40
Maximum Junction-to-Case
Steady-State
RqJC
1.1
Max
20
50
1.4
Units
°C/W
°C/W
°C/W
Rev.2.0: August 2020
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOD296A Datasheet Preview

AOD296A Datasheet

N-Channel MOSFET

No Preview Available !

AOD296A/AOI296A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250mA, VGS=0V
100
IDSS
Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250mA
1.3
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
0.7
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=50V, RL=2.5W,
RGEN=3W
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms
Typ
1.75
6.8
12.2
8.0
90
0.7
3130
245
12.5
1.4
42
18.5
7.5
4.5
8
5
41
7
30
150
Max Units
V
1
μA
5
±100 nA
2.3
V
8.3
mΩ
14.8
10.6
S
1
V
70
A
pF
pF
pF
2.1
Ω
60
nC
28
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. L=100uH, Fsw=1Hz, Tj≤150C by repetitive UIS.
APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.
AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale
Rev.2.0: August 2020
www.aosmd.com
Page 2 of 6



Part Number AOD296A
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 3 Pages
PDF Download

AOD296A Datasheet PDF





Similar Datasheet

1 AOD296A N-Channel MOSFET
Alpha & Omega Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy