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AOD400 - N-Channel MOSFET

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General Description

The AOD400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOD400 is Pb-free (meets ROHS & Sony 259 specifications).

Overview

www.DataSheet4U.com AOD400 N-Channel Enhancement Mode Field Effect.

Key Features

  • VDS (V) = 30V ID = 10 A (VGS = 10V) RDS(ON) < 30 mΩ (VGS = 10V) RDS(ON) < 36 mΩ (VGS = 4.5V) RDS(ON) < 52 mΩ (VGS = 2.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 30 ±12 10 10 40 15 30 20 10 2.1 1.3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PD.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
VBsemi Logo AOD400 N-channel 30V MOSFET VBsemi

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