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Alpha & Omega Semiconductors

AOD400 Datasheet Preview

AOD400 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AOD400
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD400 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOD400 is Pb-free (meets ROHS & Sony
259 specifications). AOD400L is a Green Product
ordering option. AOD400 and AOD400L are
electrically identical.
VDS (V) = 30V
ID = 10 A (VGS = 10V)
RDS(ON) < 30 m(VGS = 10V)
RDS(ON) < 36 m(VGS = 4.5V)
RDS(ON) < 52 m(VGS = 2.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
10
10
40
15
30
20
10
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17.4
50
4
Max
30
60
7.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.




Alpha & Omega Semiconductors

AOD400 Datasheet Preview

AOD400 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AOD400
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=10A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
VGS=2.5V, ID=5A
Forward Transconductance
VDS=5V, ID=10A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
0.7
40
0.002
1.1
25
35
28.5
40.5
21
0.77
1
5
100
1.4
30
42
36
52
1
3
V
µA
nA
V
A
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
857 1030
97
71
1.4 3.6
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
VGS=10V, VDS=15V, ID=10A
VGS=10V, VDS=15V, RL=1.5,
RGEN=6
9.7
1.63
3.1
3.5
3.7
25
4
12
nC
nC
nC
ns
ns
ns
ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
20 24 ns
13 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 0 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.


Part Number AOD400
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
Total Page 5 Pages
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