Datasheet Details
| Part number | AOD4S60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 451.69 KB |
| Description | 600V 4A MOS Power Transistor |
| Datasheet |
 AOD4S60 Datasheet
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| Part number | AOD4S60 |
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| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 451.69 KB |
| Description | 600V 4A MOS Power Transistor |
| Datasheet |
AOD4S60 Datasheet
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Product Summary The AOD4S60 & AOI4S60 & AOU4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 16A 0.9Ω 6nC 1.5µJ TO252 DPAK Top View Bottom View D D Top View TO251A IPAK Bottom View TO251 Top View Bottom View D S G AOD4S60 G S S D G AOI4S60 G D S S GD AOU4S60 G S DG S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H ID IDM IAR EAR EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Maximum 600 ±30 4 3 16 1.6 38 77 56.8 0.45 100 20 -55 to 150 300 Typical 45 -1.8 Maximum 55 0.5 2.2 Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev3: Jan 2012 www.aosmd.com Page 1 of 7 AOD4S60/AOI4S60/AOU4S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=150°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th)
AOD4S60/AOI4S60/AOU4S60 600V 4A α MOS TM Power Transistor General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOD4S60 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOD400 | N-Channel MOSFET |
| AOD402 | N-Channel MOSFET |
| AOD403 | 30V P-Channel MOSFET |
| AOD404 | N-Channel MOSFET |
| AOD405 | P-Channel MOSFET |
| AOD406 | N-Channel Enhancement Mode Field Effect Transistor |
| AOD407 | P-Channel MOSFET |
| AOD408 | N-Channel MOSFET |
| AOD409 | 60V P-Channel MOSFET |
| AOD409G | P-Channel MOSFET |