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AOD538 - 30V N-Channel MOSFET

General Description

Trench Power AlphaMOS (αMOS™ LV) technology Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 70A < 3.1mΩ < 4.8mΩ Application

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AOD538/AOI538 30V N-Channel αMOS™ General Description • Trench Power AlphaMOS (αMOS™ LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 70A < 3.1mΩ < 4.