Electrical Characteristics (TJ=25°C unless otherwise noted)
Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
Breakdown Voltage Temperature
Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A
gFS Forward Transconductance
VSD Diode Forward Voltage
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
- V/ oC
- - 10
- - ±100 nA
2.9 3.5 4.1 V
- 2.2 - S
- - 5A
- - 20 A
Effective output capacitance, energy
Effective output capacitance, time
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
- 461 -
- 15 -
- 13.3 -
- 59 -
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
- 1.4 - pF
- 5.9 - Ω
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=2.5A
- 2.6 - nC
Qgd Gate Drain Charge
- 2.8 - nC
- 16 - ns
tr Turn-On Rise Time
VGS=10V, VDS=400V, ID=2.5A,
- 7 - ns
- 33 - ns
tf Turn-Off Fall Time
- 12 - ns
trr Body Diode Reverse Recovery Time
- 200 - ns
Peak Reverse Recovery Current
IF=2.5A, dI/dt=100A/ms, VDS=400V
Qrr Body Diode Reverse Recovery Charge
- 2 - mC
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=0.5A, , RG=25Ω, Starting TJ=25°C.
I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: June 2018
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