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Alpha & Omega Semiconductors

AOD9N52 Datasheet Preview

AOD9N52 Datasheet

N-Channel MOSFET

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AOD9N52
520V,9A N-Channel MOSFET
General Description
Product Summary
The AOD9N52 have been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
620V@150
9A
< 0.86
TO252
DPAK
D
Top View
Bottom View
D
D
S
G
G
S
S
G
AOD9N52
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
520
Gate-Source Voltage
VGS
±30
Continuous Drain
CurrentB
TC=25°C
TC=100°C
ID
9
5.7
Pulsed Drain Current C
IDM
27
Avalanche Current C
IAR
3.8
Repetitive avalanche energy C
EAR
216
Single pulsed avalanche energy H
EAS
433
Peak diode recovery dv/dt
dv/dt
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
178
1.4
Junction and Storage Temperature Range
TJ, TSTG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
45
-
0.5
Maximum
55
0.5
0.7
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 0: May 2012
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOD9N52 Datasheet Preview

AOD9N52 Datasheet

N-Channel MOSFET

No Preview Available !

AOD9N52
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=520V, VGS=0V
VDS=420V, TJ=125°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=4.5A
gFS
Forward Transconductance
VDS=40V, ID=4.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
520
620
V
0.56
V/ oC
1
µA
10
±100 nΑ
3.3 3.9 4.5
V
0.71 0.86
9
S
0.72 1
V
9
A
27
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
760 962 1160 pF
65
98 130 pF
4.5
8
12 pF
1.5 3.2
5
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=400V, ID=9A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=9A,
RG=25
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=9A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V
15 19.5 24 nC
4.6
nC
7.1
nC
24
ns
44
ns
55
ns
35
ns
260 332 400 ns
2.8 3.5 4.5
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=3.8A, VDD=150V, RG=10, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: May 2012
www.aosmd.com
Page 2 of 6



Part Number AOD9N52
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 3 Pages
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