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AOD9N52
520V,9A N-Channel MOSFET
General Description
Product Summary
The AOD9N52 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested! 100% Rg Tested!
620V@150℃ 9A < 0.86Ω
TO252
DPAK
D
Top View
Bottom View
D D
S
G
G
S
S
G
AOD9N52
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
520
Gate-Source Voltage
VGS
±30
Continuous Drain CurrentB
TC=25°C TC=100°C
ID
9 5.
AOD9N52 Datasheet
