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AOE6930 - 30V Dual Asymmetric N-Channel FET

General Description

Bottom Source Technology Very Low RDS(ON) Low Gate Charge High Current Capability RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 22A 85A < 4.3mΩ < 0.83mΩ < 7.0mΩ

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Full PDF Text Transcription for AOE6930 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AOE6930. For precise diagrams, tables, and layout, please refer to the original PDF.

AOE6930 30V Dual Asymmetric N-Channel XSPairFET TM General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2....

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Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 22A 85A < 4.3mΩ < 0.83mΩ < 7.0mΩ < 1.