Datasheet Details
| Part number | AOI21357 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 372.30 KB |
| Description | P-Channel MOSFET |
| Download | AOI21357 Download (PDF) |
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| Part number | AOI21357 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 372.30 KB |
| Description | P-Channel MOSFET |
| Download | AOI21357 Download (PDF) |
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|
|
• Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -70A < 8mΩ < 13mΩ Applications • Notebook AC-in load switch • Battery protection charge/discharge 100% UIS Tested 100% Rg Tested TopView TO252 DPAK Bottom View Top View TO-251A IPAK Bottom View D D D DS G DG S G Orderable Part Number Package Type AOD21357 AOI21357 TO-252 TO-251A DS S Form Tape & Reel Tube G G D S Minimum Order Quantity 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -70 -50 -180 -23 -18 39 76 78 31 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 1.3 Max 20 50 1.6 Units °C/W °C/W °C/W Rev.1.0: November 2018 www.aosmd.com Page 1 of 6 AOD21357/AOI21357 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250mA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±25V VDS=VGS, ID=-250mA VGS=-10V, ID=-20A Static Drain-Source On-Resistance Forward Transconductance VGS=-4.5V, ID=-18A VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Diode Continuous Current
AOD21357/AOI21357 30V P-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AOI206 | 30V N-Channel MOSFET |
| AOI2210 | 200V N-Channel MOSFET |
| AOI2606 | 60V N-Channel MOSFET |
| AOI2610 | 60V N-Channel MOSFET |
| AOI2610E | 60V N-Channel MOSFET |
| AOI280A60 | N-Channel Power Transistor |
| AOI294A | N-Channel MOSFET |
| AOI296A | N-Channel MOSFET |
| AOI2N60 | 2A N-Channel MOSFET |
| AOI2N60A | 2A N-Channel MOSFET |