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Alpha & Omega Semiconductors

AOI2210 Datasheet Preview

AOI2210 Datasheet

200V N-Channel MOSFET

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AOD2210/AOI2210
200V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=5V)
200V
18A
< 105mΩ
< 120mΩ
Applications
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
100% UIS Tested
100% Rg Tested
TO-252
TO251A
DPAK
IPAK
D
Top View
Bottom View
Top View
Bottom View
D
D
D
D
S
G
Orderable Part Number
AOD2210
AOI2210
G
S
S
D
G
Package Type
TO-252
TO-251A
G
D
S
Form
Tape & Reel
Tube
G
S
Minimum Order Quantity
2500
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.1mH C
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
200
±20
18
13
45
3.0
2.5
9
4
240
100
50
2.5
1.6
-55 to 175
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
15
41
Maximum Junction-to-Case
Steady-State
RθJC
1
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
Rev.1.0: August 2014
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOI2210 Datasheet Preview

AOI2210 Datasheet

200V N-Channel MOSFET

No Preview Available !

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
200
IDSS
Zero Gate Voltage Drain Current
VDS=200V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.5
VGS=10V, ID=18A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=5V, ID=16A
gFS
Forward Transconductance
VDS=5V, ID=18A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
1.1
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=100V, ID=18A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=100V, RL=5.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=18A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
Typ
2.0
87
185
93
40
0.7
2065
74
3.8
2.2
27
12
7
3
8
10
30
4
60
800
Max Units
V
1
µA
5
±100 nA
2.5
V
105
mΩ
225
120 mΩ
S
1
V
18
A
pF
pF
pF
3.3
40
nC
20
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2014
www.aosmd.com
Page 2 of 6


Part Number AOI2210
Description 200V N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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