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AOI2210 - 200V N-Channel MOSFET

Description

Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=5V) 200V 18A < 105mΩ < 120mΩ Applications Synchronus Rectification in

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AOD2210/AOI2210 200V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=5V) 200V 18A < 105mΩ < 120mΩ Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO-252 TO251A DPAK IPAK D Top View Bottom View Top View Bottom View D D D D S G Orderable Part Number AOD2210 AOI2210 G S S D G Package Type TO-252 TO-251A Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM C
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