Datasheet Details
| Part number | AOI518 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 324.08 KB |
| Description | 30V N-Channel MOSFET |
| Download | AOI518 Download (PDF) |
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| Part number | AOI518 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 324.08 KB |
| Description | 30V N-Channel MOSFET |
| Download | AOI518 Download (PDF) |
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|
|
• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < 5.2mΩ < 11.9mΩ TopView TO252 DPAK Bottom View Top View TO-251B IPAK Bottom View D D DS G DG S S D G G G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 46 36 200 18 14 25 31 36 50 25 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 16 41 Maximum Junction-to-Case Steady-State RθJC 2.5 Max 20 50 3 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.2.0: June 2013 www.aosmd.com Page 1 of 6 AOD518/AOI518 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.8 2.2 2.6 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A 3.4 4.3 5.2 TJ=125°C 5.5 6.6 mΩ VGS=4.5V, ID=20A 6 9.1 11.9 mΩ gFS Forward Transconductance VDS=5V, ID=20A 91 S VS
AOD518/AOI518 30V N-Channel AlphaMOS General.
| Part Number | Description |
|---|---|
| AOI510 | 30V N-Channel MOSFET |
| AOI514 | 30V N-Channel MOSFET |
| AOI516 | 30V N-Channel MOSFET |
| AOI508 | 30V N-Channel MOSFET |
| AOI538 | 30V N-Channel MOSFET |
| AOI5N40 | 4.2A N-Channel MOSFET |
| AOI11S60 | Power Transistor |
| AOI1N60 | 1.3A N-Channel MOSFET |
| AOI206 | 30V N-Channel MOSFET |
| AOI21357 | P-Channel MOSFET |