Datasheet Details
| Part number | AOI600A70R |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 528.84 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOI600A70R-AlphaOmegaSemiconductors.pdf |
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Overview: AOD600A70R/AOI600A70R 700V, a MOS5 TM N-Channel Power Transistor.
| Part number | AOI600A70R |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 528.84 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOI600A70R-AlphaOmegaSemiconductors.pdf |
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 34A < 0.6Ω 15.5nC 1.9mJ TO-252 DPAK TO-251A IPAK D TopView Bottom View Top View Bottom View D D DS D G S AOD600A70R Orderable Part Number AOD600A70R AOI600A70R G S GD SD G AOI600A70R Package Type TO252 TO251A Form Tape & Reel Tube Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Maximum 700 ±20 ±30 8.5 5 34 2.1 2.2 19 100 20 104 0.8 G S Minimum Order Quantity 2500 3500 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Typical 45 1 Maximum 55 0.5 1.2 Units °C/W °C/W °C/W Rev.3.0: August 2020 www.aosmd.com Page 1 of 6 AOD600A70R/AOI600A70R Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zer
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|---|---|
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