AOI7S65
Description
The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced a MOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Product Summary
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
750V 30A 0.65W 9.2n C 2m J
TO252
TO251
TO251A
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Bottom View
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IPAK Bottom View
S G AOD7S65
S GD AOU7S65
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25°C TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
TC=25°C Power...
