Datasheet Details
| Part number | AOK20B65M2 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 546.83 KB |
| Description | 650V 20A IGBT |
| Datasheet | AOK20B65M2-AlphaOmegaSemiconductors.pdf |
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Overview: AOK20B65M2 650V, 20A Alpha IGBT TM With soft and fast recovery anti-parallel diode.
| Part number | AOK20B65M2 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 546.83 KB |
| Description | 650V 20A IGBT |
| Datasheet | AOK20B65M2-AlphaOmegaSemiconductors.pdf |
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• Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness Applications • Motor Drives • Sewing Machines • Servo and General Purpose Inverters • Fan, Pumps, Vacuum Cleaner • Other Hard Switching Applications TO-247 Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) 650V 20A 1.7V C AOK20B65M2 E C G G E Orderable Part Number Package Type Form Minimum Order Quantity AOK20B65M2 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Tube AOK20B65M2 240 Units Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C Current TC=100°C IC 40 A 20 Pulsed Collector Current, Limited by TJmax I CM 60 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 60 A Continuous Diode Forward Current TC=25°C TC=100°C IF 40 A 20 Diode Pulsed Current, Limited by TJmax I FM 60 A Short circuit withstanding time 1) VGE=15V, VCC≤400V, TJ≤175°C t SC 5 µs Power Dissipation TC=25°C TC=100°C PD 227 114 W Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol AOK20B65M2 Units Maximum Junction-to-Ambient R θ JA 40 Maximum IGBT Junction-to-Case R θ JC 0.66 Maximum Diode Junction-to-Case R θ JC 1.4 1) Allowed number of short circuits: <1000;
time between short circuits: >1s.
°C/W °C/W °C/W Rev.1.0: May 2015 www.aosmd.com Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage
| Part Number | Description |
|---|---|
| AOK20B65M1 | IGBT |
| AOK20B60D1 | 20A Alpha IGBT |
| AOK20B120D1 | IGBT |
| AOK20B120E1 | IGBT |
| AOK20B135D1 | 20A Alpha IGBT |
| AOK20N60 | N-Channel MOSFET |
| AOK20N60L | N-Channel MOSFET |
| AOK20S60 | 600V 20A MOS Power Transistor |
| AOK20S60L | Power Transistor |
| AOK22N50 | N-Channel MOSFET |