Datasheet Details
| Part number | AOK27S60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 478.70 KB |
| Description | Power Transistor |
| Datasheet | AOK27S60L-AlphaOmegaSemiconductors.pdf |
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Overview: AOK27S60L 600V 27A α MOS TM Power Transistor General.
| Part number | AOK27S60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 478.70 KB |
| Description | Power Transistor |
| Datasheet | AOK27S60L-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOK27S60L has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO-247 700V 110A 0.16Ω 26nC 6µJ D AOK27S60L S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RθJA RθCS Maximum Junction-to-Case RθJC G AOK27S60L 600 ±30 27 17 110 7.5 110 480 357 2.9 100 20 -55 to 150 300 AOK27S60L 40 0.5 0.35 S Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev 1.0: Sepetember 2017 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=150°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=13.5A, TJ=25°C VGS=10V, ID=13.5A, TJ=150°C VSD Diode Forward Voltage IS=13.5A,VGS=
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|---|---|---|---|
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