Datasheet Details
| Part number | AON6312 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 259.52 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6312 Download (PDF) |
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Overview: AON6312 30V N-Channel MOSFET General.
| Part number | AON6312 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 259.52 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6312 Download (PDF) |
|
|
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 130A < 1.85mΩ < 2.5mΩ Applications • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial • See Note I 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AON6312 1 2 3 4 PIN1 8 7 6 5 G S Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 130 83 260 46 37 80 32 36 50 20 6.2 4 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 1.9 Max 20 50 2.5 Units °C/W °C/W °C/W Rev.2.0: September 2017 www.aosmd.com Page 1 of 6 AON6312 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Max
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