Datasheet Details
| Part number | AON6366E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 360.19 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6366E-AlphaOmegaSemiconductors.pdf |
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Overview: AON6366E 30V N-Channel AlphaMOS General.
| Part number | AON6366E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 360.19 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6366E-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Optimized for load switch • High Current Capability • ESD protected • RoHS and Halogen-Free Compliant Applications • NB Battery Pack Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 34A < 3.7mΩ < 5.2mΩ HBM Class 2 Top View DFN5X6 Bottom View PIN1 PIN1 Top View 1 8 2 7 3 6 4 5 D G S Orderable Part Number AON6366E Package Type DFN 5X6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 10µs VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 34 34 135 32 25 30 45 36 46 18 6.2 4 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 2.2 Max 20 50 2.7 Units °C/W °C/W °C/W Rev.1.0 : November 2015 www.aosmd.com Page 1 of 6 AON6366E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS M
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