Datasheet Details
| Part number | AON6372 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 257.30 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6372 Download (PDF) |
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Overview: AON6372 30V N-Channel MOSFET General.
| Part number | AON6372 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 257.30 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6372 Download (PDF) |
|
|
|
• Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 47A < 7.2mΩ < 11.3mΩ Applications • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 1 2 3 4 PIN1 8 7 6 5 G S Orderable Part Number AON6372 Package Type DFN 5x6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Form Tape & Reel Minimum Order Quantity 3000 Maximum 30 ±20 47 29 90 23 18 40 8 36 26 10 6.2 4 -55 to 150 Units V V A A A mJ V W W °C Typ Max 15 20 40 50 3.8 4.8 Units °C/W °C/W °C/W Rev.1.0:January 2015 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous
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