Datasheet Details
| Part number | AON6532 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 334.15 KB |
| Description | N-Channel MOSFET |
| Download | AON6532 Download (PDF) |
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| Part number | AON6532 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 334.15 KB |
| Description | N-Channel MOSFET |
| Download | AON6532 Download (PDF) |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 68A < 5.0mΩ < 9.0mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View 8 7 6 5 D G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Maximum 30 ±20 68 43 170 27 22 32 26 36 35.5 14 5.7 3.6 -55 to 150 Units V V A VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25°C TC=100°C TA=25°C TA=70°C A A mJ V W W °C Avalanche energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 18 40 2.9 Max 22 55 3.5 Units °C/W °C/W °C/W Rev0: Sep 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6532 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS，ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125°C 1.6 2 4.1 5.8 7.1 72 0.7 1 40 1080 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 427 92 1.5 17 VGS=10V, VDS=15V, ID=20A 8.1 4.2 4 6.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 4.5 20 4.5 12 16.8 2.3 23 12 Min 30 1 5 100 2.4 5 7 9 Typ Ma
AON6532 30V N-Channel AlphaMOS General.
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