Datasheet Details
| Part number | AON6536 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 327.63 KB |
| Description | N-Channel MOSFET |
| Download | AON6536 Download (PDF) |
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| Part number | AON6536 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 327.63 KB |
| Description | N-Channel MOSFET |
| Download | AON6536 Download (PDF) |
|
|
|
Product Summary The AON6536 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 55A < 7mΩ < 10mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche Energy L=0.05mH C IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 55 35 135 22 17.5 35 31 35.5 14 5.5 3.6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 18 40 2.8 Max 22 55 3.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.1.0: February 2014 www.aosmd.com Page 1 of 6 AON6536 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C 30 1.5 135 1 5 ±100 2.0 2.5 5.6 7 8.6 11 7.8 10 58 0.72 1 40 V µA nA V A mΩ mΩ S V A DYNAMIC PARAMETERS Ciss Input
AON6536 30V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON6530 | N-Channel MOSFET |
| AON6532 | N-Channel MOSFET |
| AON6534 | 30V N-Channel MOSFET |
| AON6538 | N-Channel MOSFET |
| AON6500 | N-Channel MOSFET |
| AON6502 | 30V N-Channel MOSFET |
| AON6504 | 30V N-Channel MOSFET |
| AON6506 | N-Channel MOSFET |
| AON6508 | N-Channel MOSFET |
| AON6510 | 30V N-Channel MOSFET |