Datasheet Details
| Part number | AON6552 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 323.55 KB |
| Description | N-Channel MOSFET |
| Download | AON6552 Download (PDF) |
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| Part number | AON6552 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 323.55 KB |
| Description | N-Channel MOSFET |
| Download | AON6552 Download (PDF) |
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|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 30A < 5mΩ < 8.5mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View 8 7 6 5 D G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Maximum 30 ±20 30 23 120 23 18 32 26 36 25 10 4.1 2.6 -55 to 150 Units V V A VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25°C TC=100°C TA=25°C TA=70°C A A mJ V W W °C Avalanche energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 24 53 3.5 Max 30 64 5 Units °C/W °C/W °C/W Rev 0: Nov.
2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6552 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS，ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125°C 1.4 1.8 4.1 5.6 6.7 91 0.7 1 30 1037 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 441 61 1.5 15.5 VGS=10V, VDS=15V, ID=20A 6.8 3.0 3.6 5.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 3.3 18 4.3 12.7 17.2 2.3 22 10 Min 30 1 5 100 2.2 5 6.8 8
AON6552 30V N-Channel AlphaMOS General.
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