Datasheet Details
| Part number | AON6564 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 472.13 KB |
| Description | N-Channel MOSFET |
| Download | AON6564 Download (PDF) |
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| Part number | AON6564 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 472.13 KB |
| Description | N-Channel MOSFET |
| Download | AON6564 Download (PDF) |
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|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 32A < 5mΩ < 8.5mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A 100ns TC=25° C TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 30 ±20 32 25 128 29 23 36 32 36 25 10 6 3.8 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG A A mJ V W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17 44 3.5 Max 21 53 5 Units ° C/W ° C/W ° C/W Rev0: Dec, 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6564 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.6 2 4 5.4 6.7 83 0.7 1 30 1300 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 530 75 1.5 18.3 VGS=10V, VDS=15V, ID=20A 8.5 4.8 2.5 7.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 4.8 23.3 4.5 14 25 1550 700 130 2.3 33 17 Min 30
AON6564 30V N-Channel AlphaMOS General.
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