Datasheet Details
| Part number | AON6566 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 416.60 KB |
| Description | 30V N-Channel AlphaMOS |
| Download | AON6566 Download (PDF) |
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| Part number | AON6566 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 416.60 KB |
| Description | 30V N-Channel AlphaMOS |
| Download | AON6566 Download (PDF) |
|
|
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• Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 32A < 5mW < 8.5mW Top View DFN5X6 Bottom View PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain CurrentG TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 32 25 128 29 23 36 32 36 25 10 6 3.8 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 17 44 Maximum Junction-to-Case Steady-State RqJC 3.5 Max 21 53 5 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev1.0: January 2024 www.aosmd.com Page 1 of 6 AON6566 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.6 2 2.4 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 4 5 5.4 7 mW VGS=4.5V, ID=20A 6.7 8.5 mW gFS Forward Transconductance VDS=5V, ID=20A 83 S VSD Diode Forward Voltage IS=1A,VG
AON6566 30V N-Channel AlphaMOS General.
| Part Number | Description |
|---|---|
| AON6560 | 30V N-Channel MOSFET |
| AON6564 | N-Channel MOSFET |
| AON6500 | N-Channel MOSFET |
| AON6502 | 30V N-Channel MOSFET |
| AON6504 | 30V N-Channel MOSFET |
| AON6506 | N-Channel MOSFET |
| AON6508 | N-Channel MOSFET |
| AON6510 | 30V N-Channel MOSFET |
| AON6512 | 30V N-Channel MOSFET |
| AON6514 | 30V N-Channel MOSFET |