Datasheet Details
| Part number | AON6667 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 565.37 KB |
| Description | Dual Complementary MOSFET |
| Datasheet |
 AON6667 Datasheet
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| Part number | AON6667 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 565.37 KB |
| Description | Dual Complementary MOSFET |
| Datasheet |
AON6667 Datasheet
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • Excellent Thermal Performance • RoHS and Halogen-Free Compliant Applications • Pch+Nch Complementary MOSFET for DC-FAN Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 16A < 25mΩ < 35mΩ Q2 -30V -16A < 22mΩ < 35mΩ 100% UIS Tested 100% Rg Tested DFN5X6 EP2 PIN1 Top View S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 G1 D1 D2 G2 S1 S2 Orderable Part Number AON6667 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS EAS ±20 16 10.5 35 9.5 7.5 12 7 VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD 36 10 4 TA=25°C Power Dissipation A TA=70°C PDSM 3.1 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Max Q2 -30 ±20 -16 -12.5 -65 11 -8.5 -27 36 -36 20 8 4.1 2.6 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 30 55 9 Typ Q2 20 48 5 Max Q1 40 70 12 Max Q2 30 65 6 Units °C/W °C/W °C/W Rev.1.0: July 2016 www.aosmd.com Page 1 of 11 AON6667 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=10A Forward Transconductance Diode Forward Voltage VGS=4.5V,
AON6667 30V Dual Complementary MOSFET General.
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