Datasheet Details
| Part number | AON6932A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 566.30 KB |
| Description | 30V Dual Asymmetric N-Channel AlphaMOS |
| Download | AON6932A Download (PDF) |
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| Part number | AON6932A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 566.30 KB |
| Description | 30V Dual Asymmetric N-Channel AlphaMOS |
| Download | AON6932A Download (PDF) |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Q1 30V 28A <5mW <8.5mW Q2 30V 42A <2.5mW <3.2mW Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN5X6B Bottom View PIN1 PIN1 Top View BoBtotottmomViVewiew Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain CurrentG TC=25°C TC=100°C ID 28 22 42 33 Pulsed Drain Current C IDM 112 168 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche Energy L=0.05mH C 22 36 IDSM 17 29 IAS 32 70 EAS 26 123 VDS Spike 100ns VSPIKE 36 36 TC=25°C Power Dissipation B TC=100°C PD 31 12 78 31 TA=25°C Power Dissipation A TA=70°C 3.6 4.3 PDSM 2.3 2.7 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 29 56 3.3 Typ Q2 24 50 1.2 Max Q1 35 67 4 Max Q2 29 60 1.6 Units °C/W °C/W °C/W Rev 1.0: September 2023 www.aosmd.com Page 1 of 10 AON6932A Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.4 1.8 2.2 V RDS(ON) Static Drain-Source On-Resistan
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