Datasheet Details
| Part number | AON6936 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 729.63 KB |
| Description | N-Channel MOSFET |
| Download | AON6936 Download (PDF) |
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| Part number | AON6936 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 729.63 KB |
| Description | N-Channel MOSFET |
| Download | AON6936 Download (PDF) |
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|
|
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested Q1 30V 32A <4.9mΩ <8.4mΩ Q2 30V 44A <2mΩ <2.8mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% Rg Tested DFN5X6B Top View Bottom View PIN1 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Max Q2 30 ±20 44 34 176 40 32 50 63 36 83 33 4.3 2.7 -55 to 150 Units V V A VGS TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25°C TC=100°C TA=25°C TA=70°C 32 25 128 22 18 32 26 36 31 12 3.6 2.3 A A mJ V W W °C Avalanche Energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ Q1 29 56 3.3 Typ Q2 24 50 1.2 Max Q1 Max Q2 35 29 67 60 4 1.5 Units °C/W °C/W °C/W Rev 0 : July 2012 www.aosmd.com Page 1 of 10 Free Datasheet http://www.datasheet4u.com/ AON6936 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125°C 1.5 2 4 5.3 6.7 125 0.7 1 32 984 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 485 66 1.4 17.4 VGS=10V, VDS=15V, ID=20A 8.3 2.8 2.8 2
AON6936 30V Dual Asymmetric N-Channel AlphaMOS General.
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|---|---|
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