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Alpha & Omega Semiconductors

AON7900 Datasheet Preview

AON7900 Datasheet

30V Dual Asymmetric N-Channel MOSFET

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AON7900
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON7900 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN3.3x3.3 package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
RDS(ON) to reduce conduction losses. The AON7900 is
well suited for use in compact DC/DC converter
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
24A
<21m
<28m
Q2
30V
40A
<6.7m
<8.5m
Top View
DFN3.3X3.3A
Bottom View
PIN1
PIN1
PIN1
Top View
Bottom View
8
G2
S2 7
6
S2
S2 5
D2/S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
24 40
15 31
Pulsed Drain Current C
IDM 90 150
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
8
6
22
24
13
10
28
39
TC=25°C
Power Dissipation B TC=100°C
PD
17
7
50
20
TA=25°C
Power Dissipation A TA=70°C
PDSM
1.8
1.1
1.8
1.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
27
60
6
Typ Q2
27
60
2
Max Q1
35
72
7.5
Max Q2
35
72
2.5
1
G1
2
D1
3 D1
4 D1
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Sep 2010
www.aosmd.com
Page 1 of 10




Alpha & Omega Semiconductors

AON7900 Datasheet Preview

AON7900 Datasheet

30V Dual Asymmetric N-Channel MOSFET

No Preview Available !

AON7900
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
5 µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3 1.8 2.3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
90
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8A
TJ=125°C
17
24
21
29
m
VGS=4.5V, ID=4A
22 28 m
gFS Forward Transconductance
VDS=5V, ID=8A
33 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 V
IS Maximum Body-Diode Continuous Current
20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
470 590 710
250 360 450
13 23 40
0.7 1.5 2.3
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
7 9 11 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=8A
3 4 5 nC
1.6 nC
Qgd Gate Drain Charge
1.5 nC
tD(on)
Turn-On DelayTime
6 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.8,
RGEN=3
3 ns
18 ns
tf Turn-Off Fall Time
3 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs
8 11 14 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
15 19 23 nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Sep 2010
www.aosmd.com
Page 2 of 10


Part Number AON7900
Description 30V Dual Asymmetric N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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