Datasheet Details
| Part number | AON7934 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 543.20 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AON7934-AlphaOmegaSemiconductors.pdf |
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Overview: AON7934 30V Dual Asymmetric N-Channel AlphaMOS General.
| Part number | AON7934 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 543.20 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AON7934-AlphaOmegaSemiconductors.pdf |
|
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Q1 30V 16A <10.2mΩ <15.8mΩ Q2 30V 18A <7.7mΩ <11.6mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Power DFN3x3A Top View Bottom View G2 S2 S2 S2 (S1/D2) D1 Top View Bottom View D1 G1 D1 D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche Energy L=0.05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 Max Q2 30 ±20 ±20 16 18 12 14 64 72 13 15 7.8 9 19 25 3.0 4.1 36 36 23 25 9 10 2.5 2.5 0.9 0.9 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 40 70 4.5 Max Q1 50 90 5.4 Typ Q2 40 70 4.2 Max Q2 50 90 5 Units °C/W °C/W °C/W Rev0 : April 2012 www.aosmd.com Page 1 of 10 AON7934 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, ID=13A VGS=4.5V, ID=10A
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