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Alpha & Omega Semiconductors

AON7934 Datasheet Preview

AON7934 Datasheet

30V Dual Asymmetric N-Channel MOSFET

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AON7934
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
Q1
30V
16A
<10.2m
<15.8m
Q2
30V
18A
<7.7m
<11.6m
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
Power DFN3x3A
Top View
Bottom View
G2
S2
S2
S2
(S1/D2)
D1
Top View
Bottom View
D1 G1
D1
D1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
IAS
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30
±20 ±20
16 18
12 14
64 72
13 15
7.8 9
19 25
3.0 4.1
36 36
23 25
9 10
2.5 2.5
0.9 0.9
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
40
70
4.5
Max Q1
50
90
5.4
Typ Q2
40
70
4.2
Max Q2
50
90
5
Units
°C/W
°C/W
°C/W
Rev0 : April 2012
www.aosmd.com
Page 1 of 10




Alpha & Omega Semiconductors

AON7934 Datasheet Preview

AON7934 Datasheet

30V Dual Asymmetric N-Channel MOSFET

No Preview Available !

AON7934
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, ID=13A
VGS=4.5V, ID=10A
Forward Transconductance
VDS=5V, ID=13A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
TJ=55°C
TJ=125°C
30
1.2
1.8
8.3
11.2
12.4
50
0.7
1
5
100
2.2
10.2
13.7
15.8
1
16
V
µA
nA
V
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
485
235
32
0.9 1.8 2.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8 11 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=13A
3.9 5.3 nC
1.1 nC
Qgd Gate Drain Charge
2.1 nC
tD(on)
Turn-On DelayTime
3.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.2, 2.8 ns
tD(off)
Turn-Off DelayTime
RGEN=3
16.3
ns
tf Turn-Off Fall Time
3 ns
trr Body Diode Reverse Recovery Time IF=13A, dI/dt=500A/µs
9.9 ns
Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs
12.9 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : April 2012
www.aosmd.com
Page 2 of 10


Part Number AON7934
Description 30V Dual Asymmetric N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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