Datasheet Details
| Part number | AONR66922 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 362.75 KB |
| Description | N-Channel MOSFET |
| Download | AONR66922 Download (PDF) |
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| Part number | AONR66922 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 362.75 KB |
| Description | N-Channel MOSFET |
| Download | AONR66922 Download (PDF) |
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|
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Logic Level Gate Drive • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 50A < 9mΩ < 12mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Chargers • PD Adaptor 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 EP Top View Bottom View PIN 1 PIN 1 Orderable Part Number AONR66922 Package Type DFN 3.3x3.3 Top View S1 S2 S3 G4 8D 7D 6D 5D G D S Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 50 34 150 15 12 35 61 52 20.5 4.1 2.6 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 25 50 1.9 Max 30 60 2.4 Units °C/W °C/W °C/W Rev.1.1: June 2018 www.aosmd.com Page 1 of 6 AONR66922 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=15A Static Drain-Source On-Resistance VGS=4.5V, ID=13A Forward Transconductance VDS=5V, ID=15A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC
AONR66922 100V N-Channel AlphaSGT TM General.
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