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AONS30302 - 30V N-Channel Transistor

Description

Trench Power MOSFET technology Low RDS(ON) Low Gate Charge High Current Capability RoHS 2.0 and Halogen-Free Compliant Applications High performance ORing, Efuse Ultra high current battery charge/discharge Product Summary VDS ID

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Datasheet Details

Part number AONS30302
Manufacturer Alpha & Omega Semiconductors
File Size 468.55 KB
Description 30V N-Channel Transistor
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AONS30302 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Applications • High performance ORing, Efuse • Ultra high current battery charge/discharge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 30V 480A < 0.85mΩ < 4.
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