| Title | |
| Description | • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Applications • High performance ORing, Efuse • Ultra high current battery charge/discharge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 30V 480A < 0.85mΩ < 4.6mΩ DFN5X6 D Top View Bottom ... |
| Features |
°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 480 340 900 73 61 80 320 326 163 7.5 5.2
-55 to 175
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 15 40 0.35
Max 20 50 0.46
Units V V
A
A A...
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| Datasheet |
 AONS30302 Datasheet - 468.55KB |
| Distributor |
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| Stock | In stock |
| Price | |
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| Distributor | Stock | Price | BuyNow |
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