Datasheet Details
| Part number | AONS30302 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 468.55 KB |
| Description | 30V N-Channel Transistor |
| Download | AONS30302 Download (PDF) |
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Overview: AONS30302 30V N-Channel MOSFET General.
| Part number | AONS30302 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 468.55 KB |
| Description | 30V N-Channel Transistor |
| Download | AONS30302 Download (PDF) |
|
|
|
• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Applications • High performance ORing, Efuse • Ultra high current battery charge/discharge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 30V 480A < 0.85mΩ < 4.6mΩ DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS30302 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 480 340 900 73 61 80 320 326 163 7.5 5.2 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.35 Max 20 50 0.46 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2.0: February 2024 www.aosmd.com Page 1 of 6 AONS30302 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=30V, VGS=0V Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAM
| Part Number | Description |
|---|---|
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