Datasheet Details
| Part number | AONS36314 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 414.88 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONS36314 Download (PDF) |
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| Part number | AONS36314 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 414.88 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONS36314 Download (PDF) |
|
|
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 85A < 2.9mΩ < 3.5mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AONS36314 S1 S2 S3 G4 PIN1 Package Type DFN 5x6 8D 7D 6D 5 DG S Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Maximum 30 ±12 85 60 185 36.5 29 75 28 42 17 6.2 4 -55 to 150 Typ Max 15 20 40 50 2.4 3 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.1.1: December 2023 www.aosmd.com Page 1 of 6 AONS36314 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 μA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.1 1.5 1.9 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 2.4 2.9 mΩ 3.4 4.1 VGS=4.5V, ID=20A 2.8 3.5 mΩ gFS Forward Tr
AONS36314 30V N-Channel MOSFET General.
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