Datasheet Details
| Part number | AONS62814T |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 270.55 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet | AONS62814T-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AONS62814T 80V N-Channel AlphaSGT TM General.
| Part number | AONS62814T |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 270.55 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet | AONS62814T-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 80V 215A < 2.6mΩ < 3.5mΩ Applications • Secondary Synchronous Rectification MOSFET for Server and Telecom 100% UIS Tested 100% Rg Tested Max Tj=175°C Top View DFN5x6 Bottom View PIN1 Orderable Part Number AONS62814T PIN1 Package Type DFN 5x6 Top View S1 S2 S3 G4 8D 7D 6D 5D Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±20 215 150 860 40 33 73 266 258 129 8.8 6.1 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.43 Max 17 50 0.58 Units °C/W °C/W °C/W Rev.2.0: January 2025 www.aosmd.com Page 1 of 6 AONS62814T Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.1 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance
| Part Number | Description |
|---|---|
| AONS62530 | 150V N-Channel MOSFET |
| AONS62604 | 60V N-Channel MOSFET |
| AONS62614 | 60V N-Channel MOSFET |
| AONS62614T | 60V N-Channel MOSFET |
| AONS62920 | 100V N-Channel AlphaSGT |
| AONS62922 | 120V N-Channel AlphaSGT |
| AONS660A70F | N-Channel Power Transistor |
| AONS66402 | N-Channel MOSFET |
| AONS66405T | 40V N-Channel MOSFET |
| AONS66406 | 40V N-Channel MOSFET |