Datasheet Details
| Part number | AONS66405T |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 425.50 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AONS66405T-AlphaOmegaSemiconductors.pdf |
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Overview: AONS66405T 40V N-Channel AlphaSGT TM General.
| Part number | AONS66405T |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 425.50 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AONS66405T-AlphaOmegaSemiconductors.pdf |
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• AlphaSGTTM N-Channel Power MOSFET • Low RDS(ON)*QOSS and optimised switching performance.
• RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 40V 385A < 0.95mΩ < 1.05mΩ Applications • Synchronous Rectification • BMS and Motor 100% UIS Tested 100% Rg Tested Max Tj=175°C DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS66405T Package Type DFN 5x6 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 385 270 1080 70 59 75 844 258 129 8.8 6.1 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.43 Max 17 50 0.58 Units °C/W °C/W °C/W Rev.1.0: March 2023 www.aosmd.com Page 1 of 6 AONS66405T Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PAR
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