Datasheet Details
| Part number | AONS66521 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 381.11 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AONS66521-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AONS66521 150V N-Channel MOSFET General.
| Part number | AONS66521 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 381.11 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AONS66521-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power MOSFET technology • Low RDS(ON) and Gate Charge • Enhanced Robustness • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 150V 100A < 9.8mΩ < 11.5mΩ Applications • High Frequency Switching and Synchronous Rectification 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View Top View PIN1 S1 S2 S3 G4 8D 7D 6D 5D PIN1 Orderable Part Number AONS66521 Package Type DFN 5X6 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Diode reverse recovery VDS=0 to 75V,IF<=10A,Tj=25°C dv/dt di/dt TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 150 ±20 100 64 400 16 13 40 240 30 500 215 86 6.2 4 -55 to 150 Units V V A A A mJ V/ns A/us W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.43 Max 20 50 0.58 Units °C/W °C/W °C/W Rev.2.1: November 2023 www.aosmd.com Page 1 of 6 AONS66521 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 150 IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 3.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,
| Part Number | Description |
|---|---|
| AONS66520 | 150V N-Channel MOSFET |
| AONS66524 | 150V N-Channel MOSFET |
| AONS660A70F | N-Channel Power Transistor |
| AONS66402 | N-Channel MOSFET |
| AONS66405T | 40V N-Channel MOSFET |
| AONS66406 | 40V N-Channel MOSFET |
| AONS66407 | 40V N-Channel MOSFET |
| AONS66408 | 40V N-Channel MOSFET |
| AONS66415 | 40V N-Channel MOSFET |
| AONS66607 | 60V N-Channel MOSFET |