Datasheet Details
| Part number | AONS66817 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 427.00 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
 AONS66817 Datasheet
|
|
|
| Part number | AONS66817 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 427.00 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
AONS66817 Datasheet
|
|
|
|
• AlphaSGTTM N-Channel Power MOSFET • Low RDS(ON) • Low Gate Charge • Enhanced body diode performance • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 80V 120A < 4.1mΩ < 4.7mΩ Applications • DC Motor Drive and BMS industrial application.
• Synchoronous Rectification in DC/DC and AC/DC Converters.
100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS66817 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±20 120 77 210 28 23 50 125 113 45 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 0.9 Max 20 50 1.1 Units °C/W °C/W °C/W Rev.1.1:January 2024 www.aosmd.com Page 1 of 6 AONS66817 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0
AONS66817 80V N-Channel AlphaSGT2 TM General.
| Part Number | Description |
|---|---|
| AONS66811 | 80V N-Channel MOSFET |
| AONS66814 | 80V N-Channel MOSFET |
| AONS660A70F | N-Channel Power Transistor |
| AONS66402 | N-Channel MOSFET |
| AONS66405T | 40V N-Channel MOSFET |
| AONS66406 | 40V N-Channel MOSFET |
| AONS66407 | 40V N-Channel MOSFET |
| AONS66408 | 40V N-Channel MOSFET |
| AONS66415 | 40V N-Channel MOSFET |
| AONS66520 | 150V N-Channel MOSFET |