Datasheet4U Logo Datasheet4U.com

AOP607 - MOSFET

Description

The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AOP607 is Pbfree (meets ROHS & Sony 259 specifications).

Features

  • n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.4A (VGS=-10V) RDS(ON) RDS(ON) < 56m Ω (VGS=10V) < 105mΩ (VGS =-10V) < 77m Ω (VGS=4.5V) < 135mΩ (VGS =-4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -60 ±20 -3.4 -2.7 -.

📥 Download Datasheet

Datasheet preview – AOP607

📁 Similar Datasheet

Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com AOP607 Complementary Enhancement Mode Field Effect Transistor General Description The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pbfree (meets ROHS & Sony 259 specifications). AOP607L is a Green Product ordering option. AOP607 and AOP607L are electrically identical. Features n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.4A (VGS=-10V) RDS(ON) RDS(ON) < 56m Ω (VGS=10V) < 105mΩ (VGS =-10V) < 77m Ω (VGS=4.5V) < 135mΩ (VGS =-4.
Published: |