AOP610
Overview
The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
- 7 ID IDM PD IAR EAR TJ, TSTG 6.1 30 2.3 1.45 15 11 -55 to 150 Repetitive avalanche energy 0.1mH Junction and Storage Temperature Range Thermal Characteristics: n-channel+schottky and p-channel Symbol Parameter A t ≤ 10s Maximum Junction-to-Ambient RθJA A Steady-State Maximum Junction-to-Ambient RθJL Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient RθJA A Steady-State Maximum Junction-to-Ambient C RθJL Steady-State Maximum Junction-to-Lead Typ n-ch n-ch n-ch p-ch p-ch p-ch Max 45 78 30 38.5 78 28 55 95 40 55 95 40
