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Alpha & Omega Semiconductors

AOP610 Datasheet Preview

AOP610 Datasheet

Complementary Enhancement Mode Field Effect Transistor

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AOP610
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP610 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications. A
Schottky diode in parallel with the n-channel
FET reduces body diode related losses. It is
ESD protected. Standard product AOP610 is
Pb-free (meets ROHS & Sony 259
specifications). AOP610L is a Green Product
ordering option. AOP610 and AOP610L are
electrically identical.
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 7.7A (VGS=10V) -6.2A (VGS=10V)
RDS(ON)
RDS(ON)
< 24m(VGS=10V) < 37m (VGS = -10V)
< 42m(VGS=4.5V) < 60m (VGS = -4.5V)
ESD rating: 1500V (HBM)
PDIP-8
S2/A
G2
1
2
8 D2/K N-ch
7 D2/K
S1
G1
3
4
6
5
D1
D1
P-ch
D2
K2
G2 G1
S2 A2
D1
S1
n-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
7.7
6.1
30
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.1mH B
PD
IAR
EAR
2.3
1.45
15
11
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
p-channel
Max p-channel
-30
±20
-6.2
-4.9
-30
2.3
1.45
20
20
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel+schottky and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
Symbol
RθJA
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t 10s
Steady-State
RθJL
RθJA
Maximum Junction-to-Lead C
Steady-State
RθJL
Typ
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Max
45
78
30
38.5
78
28
55
95
40
55
95
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.




Alpha & Omega Semiconductors

AOP610 Datasheet Preview

AOP610 Datasheet

Complementary Enhancement Mode Field Effect Transistor

No Preview Available !

AOP610
www.DataSheet4U.com
N-Channel+Schottky Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.7A
VGS=4.5V, ID=4A
Forward Transconductance
VDS=5V, ID=7.7A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1
20
10
V
2
50
125
µA
10 µA
23V
A
20
29
24
35
m
34 42 m
18 S
0.5 1
V
3A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
543 630
142
76
2.1 3
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=7.7A
VGS=10V, VDS=15V, RL=1.9,
RGEN=3
IF=7.7A, dI/dt=100A/µs
IF=7.7A, dI/dt=100A/µs
11 15
5.3 7
1.9
4
4.7 7
4.9 10
16.2 22
3.5 7
15.7 20
7.9 10
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. Rev 0: October 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.


Part Number AOP610
Description Complementary Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
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AOP610 Datasheet PDF






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