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AOP800 - Dual N-Channel MOSFET

Datasheet Summary

Description

The AOP800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AOP800 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 9.3A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 1 2 3 4 8 7 6 5 G1 S1 G2 S2 PDIP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 9.3 7.5 40 2.5 1.6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Tempera.

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Datasheet Details

Part number AOP800
Manufacturer Alpha & Omega Semiconductors
File Size 144.04 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AOP800 Datasheet
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www.DataSheet4U.com AOP800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AOP800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP800 is Pb-free (meets ROHS & Sony 259 specifications). AOP800L is a Green Product ordering option. AOP800 and AOP800L are electrically identical. Features VDS (V) = 30V ID = 9.3A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.
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