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AOP802 Datasheet Preview

AOP802 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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AOP802
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP802 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOP802 is Pb-free
(meets ROHS & Sony 259 specifications). AOP802L
is a Green Product ordering option. AOP802 and
AOP802L are electrically identical.
Features
VDS (V) = 60V
ID = 7.9A (VGS = 10V)
RDS(ON) < 25m(VGS = 10V)
RDS(ON) < 30m(VGS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
7.9
6.3
40
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
30
66
25
Max
40
85
35
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.




Alpha & Omega Semiconductors

AOP802 Datasheet Preview

AOP802 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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AOP802
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=48V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.9A
VGS=4.5V, ID=7.1A
Forward Transconductance
VDS=5V, ID=7.9A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=10V, VDS=30V, ID=7.9A
VGS=10V, VDS=30V, RL=3.9,
RGEN=3
IF=7.9A, dI/dt=100A/µs
IF=7.9A, dI/dt=100A/µs
Min
60
1
40
Typ Max Units
V
1
5
µA
100 nA
2.1 3
V
A
17.8
32.2
25
42
m
19.7 30 m
30 S
0.74 1
V
4A
1920
155
116
0.65
2300
0.8
pF
pF
pF
47.6 68
24.2 30
6
14.4
7.4
5.1
28.2
5.5
34 41
46
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.


Part Number AOP802
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
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AOP802 Datasheet PDF






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