Datasheet Summary
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AOP806 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP806 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 75V ID = 3.4A (VGS = 10V) RDS(ON) < 132mΩ (VGS = 10V) RDS(ON) < 168mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
1 2 3 4
8 7 6 5
G1 S1
G2...