Datasheet Details
| Part number | AOSD21307 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 315.29 KB |
| Description | 30V Dual P-Channel MOSFET |
| Datasheet | AOSD21307-AlphaOmegaSemiconductors.pdf |
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Overview: AOSD21307 30V Dual P-Channel MOSFET General.
| Part number | AOSD21307 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 315.29 KB |
| Description | 30V Dual P-Channel MOSFET |
| Datasheet | AOSD21307-AlphaOmegaSemiconductors.pdf |
|
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• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -9A < 16mΩ < 28mΩ Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View D1 D2 Pin1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G1 G2 Pin1 S1 S2 Orderable Part Number AOSD21307 Package Type SO-8 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -9 -7 -36 33 54 2.0 1.2 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 50 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 Units °C/W °C/W °C/W Rev.1.1: July 2023 www.aosmd.com Page 1 of 5 AOSD21307 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current • Latest VDS=-30V, VGS=0V TJ=55°C advanced Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.3 VGS=-10V, ID=-9A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-7A gFS Forward Transconductance VDS=-5V, ID=-9A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Cr
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|---|---|
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| AOSP21307 | 30V P-Channel MOSFET |
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