Datasheet Details
| Part number | AOSD21311C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 345.67 KB |
| Description | 30V Dual P-Channel MOSFET |
| Datasheet | AOSD21311C-AlphaOmegaSemiconductors.pdf |
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Overview: AOSD21311C 30V Dual P-Channel MOSFET General.
| Part number | AOSD21311C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 345.67 KB |
| Description | 30V Dual P-Channel MOSFET |
| Datasheet | AOSD21311C-AlphaOmegaSemiconductors.pdf |
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• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested -30V -5A < 42mΩ < 64mΩ HBM Class 1C Top View SOIC-8 Bottom View Top View D D S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G G Pin1 Orderable Part Number AOSD21311C Pin1 Package Type SO-8 S S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -5 -3.9 -20 13 8 1.7 1.1 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 52 80 Maximum Junction-to-Lead Steady-State RqJL 35 Max 70 100 45 Units °C/W °C/W °C/W Rev.1.0: May 2019 www.aosmd.com Page 1 of 5 AOSD21311C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 VGS=-10V, ID=-5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-4.1A gFS Forward Transconductance VDS=-5V, ID=-5A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Outpu
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