Datasheet Details
| Part number | AOSD26313C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 428.02 KB |
| Description | 30V Complementary MOSFET |
| Datasheet | AOSD26313C-AlphaOmegaSemiconductors.pdf |
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Overview: AOSD26313C 30V Complementary MOSFET General.
| Part number | AOSD26313C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 428.02 KB |
| Description | 30V Complementary MOSFET |
| Datasheet | AOSD26313C-AlphaOmegaSemiconductors.pdf |
|
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• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge Product Summary P-Channel VDS= -30V ID=-5.7A (VGS=-10V) RDS(ON) < 32mΩ (VGS=-10V) < 55mΩ (VGS=-4.5V) ESD protection 100% UIS Tested 100% Rg Tested N-Channel VDS= 30V ID= 7A (VGS=10V) RDS(ON) < 20mΩ (VGS=10V) < 26mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested Top View SO-8 Bottom View Top View D1 D2 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 G2 G1 4 5 D1 Pin1 Orderable Part Number AOSD26313C Pin1 Package Type SO-8 S1 S2 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS -30 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA=25°C TA=70°C ID -5.7 7 -4.4 5.4 Pulsed Drain Current C Avalanche Current C IDM -23 34 IAS 20 15 Avalanche energy L=0.1mH C EAS 20 11 Power Dissipation B TA=25°C TA=70°C 1.7 1.7 PD 1.1 1.1 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ Q1 Max Q1 Typ Q2 Max Q2 52 70 52 70 80 100 80 100 35 45 35 45 Units °C/W °C/W °C/W Rev.1.1: September 2019 www.aosmd.com Page 1 of 9 AOSD26313C P-CH Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current • Latest VDS=-30V, VGS=0V TJ=55°C advanced Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 VGS=-10V, ID=-5.7A RDS(ON) Static Drain-Source On-Resistance TJ=1
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