Datasheet Details
| Part number | AOSD32334C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 326.55 KB |
| Description | 30V Dual N-Channel MOSFET |
| Datasheet | AOSD32334C-AlphaOmegaSemiconductors.pdf |
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Overview: AOSD32334C 30V Dual N-Channel MOSFET General.
| Part number | AOSD32334C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 326.55 KB |
| Description | 30V Dual N-Channel MOSFET |
| Datasheet | AOSD32334C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • Ideal for Load Switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ESD protection 100% UIS Tested 100% Rg Tested 30V 7A < 20mΩ < 26mΩ Top View SOIC-8 Bottom View Top View D D S2 1 8 D2 G2 2 7 D2 S1 3 G1 4 6 5 D1 D1 G G Pin1 Orderable Part Number AOSD32334C Package Type SO-8 S S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 7 5.4 34 15 11 1.7 1.1 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 52 80 Maximum Junction-to-Lead Steady-State RqJL 35 Max 70 100 45 Units °C/W °C/W °C/W Rev.1.1: August 2023 www.aosmd.com Page 1 of 5 AOSD32334C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 μA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±10 μA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 1.8 2.3 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A TJ=125°C 16 20 mΩ 24 30 VGS=4.5V, ID=6.3A 20 26 mΩ gFS Forward Transconductance VDS=5V, ID=7A 33 S VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 2 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Outp
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