Datasheet Details
| Part number | AOSD62666E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 380.10 KB |
| Description | 60V Dual N-Channel MOSFET |
| Datasheet | AOSD62666E-AlphaOmegaSemiconductors.pdf |
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Overview: AOSD62666E 60V Dual N-Channel AlphaSGT TM General.
| Part number | AOSD62666E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 380.10 KB |
| Description | 60V Dual N-Channel MOSFET |
| Datasheet | AOSD62666E-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Gate Drive • ESD Protected • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • Motor Control, Lighting, Industrial and Load switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 60V 9.5A < 14.5mΩ < 19mΩ HBM Class 2 Top View SOIC-8 Bottom View Top View D1 D2 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 G2 G1 4 5 D1 Pin1 S1 S2 Orderable Part Number AOSD62666E Package Type SO-8 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 9.5 7.5 38 14 29 2.5 1.6 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 42 70 Maximum Junction-to-Lead Steady-State RθJL 30 Max 50 85 40 Units °C/W °C/W °C/W Rev.1.0: May 2017 www.aosmd.com Page 1 of 5 AOSD62666E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 VGS=10V, ID=9.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=8.5A gFS Forward Transconductance VDS=5V, ID=9.5A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMET
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