Datasheet Details
| Part number | AOSP21311C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 554.45 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOSP21311C-AlphaOmegaSemiconductors.pdf |
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Overview: AOSP21311C 30V P-Channel MOSFET General.
| Part number | AOSP21311C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 554.45 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOSP21311C-AlphaOmegaSemiconductors.pdf |
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• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested -30V -6.5A < 42mΩ < 64mΩ HBM Class 1C SOIC-8 Top View D D D D Bottom View G S S S Pin1 Top View S1 S2 S3 G4 Pin1 8D 7D 6D 5D Orderable Part Number AOSP21311C Package Type SO-8 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -6.5 -4.7 -24 13 8 2.5 1.6 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 42 70 Maximum Junction-to-Lead Steady-State RqJL 20 Max 50 85 30 Units °C/W °C/W °C/W Rev.2.0: July 2020 www.aosmd.com Page 1 of 5 AOSP21311C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 VGS=-10V, ID=-6A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-5A gFS Forward Transconductance VDS=-5V, ID=-6A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Cr
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