Datasheet Details
| Part number | AOSP32320C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.79 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOSP32320C-AlphaOmegaSemiconductors.pdf |
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Overview: AOSP32320C 30V N-Channel MOSFET General.
| Part number | AOSP32320C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.79 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOSP32320C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • DC/DC Converters in Computing • Suitable for general purpose Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 8.5A < 22mΩ < 30mΩ Top View D D D D SOIC-8 Bottom View G S S S Orderable Part Number Package Type AOSP32320C SO-8 D G S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 8.5 6.5 36 11 6 2.5 1.6 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 42 70 Maximum Junction-to-Lead Steady-State RqJL 20 Max 50 85 30 Units °C/W °C/W °C/W Rev.1.0: March 2019 www.aosmd.com Page 1 of 5 AOSP32320C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=8.5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=7.3A gFS Forward Transconductance VDS=5V, ID=8.5A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz Crss Reverse Transfer Capacitance Rg Gate resistance f=1M
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