Datasheet Details
| Part number | AOSP32368 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 431.10 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOSP32368-AlphaOmegaSemiconductors.pdf |
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Overview: AOSP32368 30V N-Channel MOSFET General.
| Part number | AOSP32368 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 431.10 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOSP32368-AlphaOmegaSemiconductors.pdf |
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• Low RDS(ON) • Optimized for Load Switch • High Current Capability • ESD Protected • RoHS and Halogen-Free Compliant Applications • Suitable for loadswitch • Battery protection Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 16A < 5.5mΩ < 7.5mΩ HBM Class 2 Top View D D D D SOIC-8 Bottom View G S S S Orderable Part Number AOSP32368 Package Type SO-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL D G S Form Tape & Reel Minimum Order Quantity 3000 Maximum 30 ±20 16 12 64 30 45 3.1 2 -55 to 150 Units V V A A mJ W °C Typ Max Units 31 40 °C/W 59 75 °C/W 16 24 °C/W Rev 1.0: May 2017 www.aosmd.com Page 1 of 5 AOSP32368 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 33 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=16A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=16A gFS Forward Transconductance VDS=5V, ID=16A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MH
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