Datasheet Details
| Part number | AOSP66925 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.97 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOSP66925-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AOSP66925 100V N-Channel AlphaSGT TM General.
| Part number | AOSP66925 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.97 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOSP66925-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power AlphaSGTTM technology 100V • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 11A < 12.5mΩ < 16.8mΩ Applications • High Frequency Switching and Synohronous Rectification.
100% UIS Tested 100% Rg Tested SO-8 Top View Bottom View D D D D D G S S S Pin 1 Orderable Part Number AOSP66925 Package Type SO-8 G S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 11 8.6 44 32 51 3.1 2 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: November 2021 www.aosmd.com Page 1 of 5 AOSP66925 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=11A Static Drain-Source On-Resistance VGS=4.5V, ID=11A Forward Transconductance VDS=5V, ID=11A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VD
| Part Number | Description |
|---|---|
| AOSP66919 | 100V N-Channel MOSFET |
| AOSP66406 | 40V N-Channel MOSFET |
| AOSP62530 | 150V N-Channel MOSFET |
| AOSP21307 | 30V P-Channel MOSFET |
| AOSP21311C | 30V P-Channel MOSFET |
| AOSP21313C | 30V P-Channel MOSFET |
| AOSP21321 | 30V P-Channel MOSFET |
| AOSP21357 | 30V P-Channel MOSFET |
| AOSP32314 | 30V N-Channel MOSFET |
| AOSP32320C | 30V N-Channel MOSFET |