AOT12N30 Datasheet | Alpha & Omega Semiconductors

Description Product Summary The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 350V@150℃ 11.5A < 0.42W Top View TO-220 TO-220F AOTF12N30 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOTF12N30 Drain-Source Voltage Gate-Source Voltage ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Single pulsed avalanche energy G Peak diode recovery dv/dt IDM IAS EAS dv/dt 11.5- 7.3- 430 5 TC=25°C Power Dissipation B Derate above 25o C 132...