Datasheet Details
| Part number | AOT12N30 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 422.90 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOT12N30-AlphaOmegaSemiconductors.pdf |
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Overview: AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General.
| Part number | AOT12N30 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 422.90 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOT12N30-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 350V@150℃ 11.5A < 0.42W Top View TO-220 TO-220F D S G AOT12N30 D G AOTF12N30 S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N30 AOTF12N30 Drain-Source Voltage VDS 300 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Single pulsed avalanche energy G Peak diode recovery dv/dt ID IDM IAS EAS dv/dt 11.5 11.5* 7.3 7.3* 29 3.8 430 5 TC=25°C Power Dissipation B Derate above 25oC PD 132 1 36 0.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT12N30 65 0.5 AOTF12N30 65 -- Maximum Junction-to-Case RqJC 0.95 3.5 S Units V V A A mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev 2.1: April 2024 www.aosmd.com Page 1 of 6 AOT12N30/AOTF12N30 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C 300 350 V BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250μA, VGS=0V 0.29 V/ oC IDSS IGSS VGS(th) RDS(ON) gFS VSD IS IS
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOT12N30 | N-Channel MOSFET | INCHANGE |
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