AOT12N40
Description
Product Summary
The AOT12N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOT12N40L
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
Top View TO-220
500V@150℃ 11A <0.59Ω
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
±30
Continuous Drain Current
TC=25°C TC=100°C
11 7
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt dv/dt
TC=25°C Power Dissipation B Derate above 25o...
