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Alpha & Omega Semiconductors

AOT12N40 Datasheet Preview

AOT12N40 Datasheet

N-Channel MOSFET

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AOT12N40
400V,11A N-Channel MOSFET
General Description
Product Summary
The AOT12N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT12N40L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-220
500V@150
11A
<0.59
D
DS
G
G
AOT12N40
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
400
Gate-Source Voltage
VGS
±30
Continuous Drain
Current
TC=25°C
TC=100°C
ID
11
7
Pulsed Drain Current C
IDM
28
Avalanche Current C
IAR
3.5
Repetitive avalanche energy C
EAR
184
Single pulsed avalanche energy G
EAS
368
Peak diode recovery dv/dt
dv/dt
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
184
1.5
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
Typical
54
-
Maximum
65
0.5
Maximum Junction-to-Case
RθJC
0.56
0.68
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Sep 2012
www.aosmd.com
Page 1 of 5




Alpha & Omega Semiconductors

AOT12N40 Datasheet Preview

AOT12N40 Datasheet

N-Channel MOSFET

No Preview Available !

AOT12N40
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=400V, VGS=0V
VDS=320V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=6A
VDS=40V, ID=6A
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=320V, ID=12A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=200V, ID=12A,
RG=25
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
400
V
500
0.4
V/ oC
1
µA
10
±100 nΑ
3.3 3.9 4.5
V
0.49 0.59
10
S
0.72 1
V
11
A
28
A
740 925 1110 pF
70 100 130 pF
3.5 6.4 9.0 pF
1.4 2.9 4.5
13
17
21
nC
5.4
nC
5.7
nC
25
ns
57
ns
41
ns
32
ns
180 235 290 ns
1.9 2.4 2.9
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.5A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Sep 2012
www.aosmd.com
Page 2 of 5


Part Number AOT12N40
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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